DOI:
Authors:
Kevin Ryan
Abstract:
A laboratory scale plating cell was built that provided reproducible bottom-up fill results for the electrochemical deposition of copper in damascene features. Several techniques used in the full wafer plating tool were incorporated into the setup to accurately control the process conditions. These techniques included but were not limited to a voltage controlled `hot-entry’ step, a custom coupon holder to allow sample rotation, a secondary thief electrode and an automatic entry system. The results of qualification experiments are presented to demonstrate that precise control was realized along with repeatable partial fill plating results. The qualified setup was then used to perform time-evolved partial fill plating experiments using several different structural configurations of open-source suppressors to investigate their affect on the gap-fill characteristics.